CF4 plasma treated poly-Si film by PECVD for high-k PrTiO3 poly-Si TFTs

Author

Pan, Tung-Ming ; Chang, Chih-Jen ; Chan, Ching-Lin ; Su, Sheng-Han ; Lin, Wu-Ching

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

The authors have fabricated high-performance CF₄ plasma treated poly-Si TFTs with a high-k PrTiO₃ gate dielectric. The electrical characteristics such as the threshold voltage, subthreshold swing, I_ON/I_OFF current ratio, and carrier mobility are effectively improved. In addition, the CF₄ plasma treatment improves the HC and PBTI immunity due to the formation of Si-F bonds. The CF₄ plasma treatment is a simple, effective and process-compatible method to fabricate high-performance and high-reliability PrTiO₃ poly-Si TFTs.

Keywords

high-k dielectric thin films; plasma CVD; praseodymium compounds; semiconductor device reliability; silicon; thin film transistors; CF₄; PECVD; PrTiO₃; Si; electrical characteristics; high-k gate dielectric; plasma treatment; poly-Si TFT; reliability; subthreshold swing; thin film transistor; threshold voltage; High K dielectric materials; High-K gate dielectrics; Plasma density; Plasma devices; Plasma displays; Plasma properties; Plasma temperature; Stress; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378022

Filename

5378022