Tailored ION/IOFF ratio of nanotube network transistors by pulsed breakdown

Author

Estrada, David ; Miguel, Aidee San ; Pecora, Ryan ; Pop, Eric

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

In this study, we used pulsed electrical breakdowns to investigate the effects of film density, high-temperature, and vacuum (10^-5 Torr) ambient on electrical burnout of such CNT film devices. We show that under pulsed electrical stress, ultra-dense films fail without improvement in the ON/OFF ratio. The ratio of low density devices is enhanced to levels comparable with geometrically striped CNT thin films without the need for additional process steps. Furthermore, our findings suggest water-assisted oxidation is the dominant breakdown mechanism when electrically sorting CNTs under ambient conditions.

Keywords

carbon nanotubes; nanotube devices; oxidation; semiconductor device breakdown; thin films; carbon nanotube network transistors; film density; pulsed electrical breakdowns; pulsed electrical stress; thin films; water-assisted oxidation; Conductive films; Electric breakdown; Electrodes; Oxidation; Semiconductivity; Semiconductor films; Sorting; Stress; Temperature; Vacuum breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378024

Filename

5378024