A theoretical study of electron mobility reduction due to acoustic phonon modulation in a free-standing semiconductor nanowire

Author

Hattori, J. ; Uno, S. ; Mori, Nobuya ; Nakazato, Kazuo

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Nagoya Univ., Nagoya

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

289

Lastpage

292

Abstract

Impacts of modulated acoustic phonons on electron transport in a free-standing cylindrical semiconductor nanowire are theoretically studied. We formulate the electron scattering rate and mobility limited by the intra-valley acoustic phonon scattering mechanism, using bulk and modulated acoustic phonons in a [001]-directed Si nanowire. The scattering rate calculated using modulated acoustic phonons is larger than that with bulk phonons, and therefore the mobility is smaller when modulated acoustic phonons are incorporated. These results are attributed to an increase of the form factor due to acoustic phonon modulation. The form factor increase has a universality independent of wire material and radius.

Keywords

electron transport theory; nanowires; phonons; semiconductor quantum wires; acoustic phonon modulation; electron mobility reduction; electron transports; free-standing cylindrical semiconductor nanowire; intravalley acoustic phonon scattering mechanism; Acoustic devices; Acoustic materials; Acoustic scattering; Acoustical engineering; Electron mobility; MOSFETs; Phonons; Semiconductor materials; Temperature; Wire; acoustic phonon; electron mobility; electron-phonon interaction; gate-all-around;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648294

Filename

4648294