Modifying electron transfer at the silicon-molecule interface using atomic tethers

Modifying the electrical properties of the silicon interface is of prime interest for next generation electronics. Scaling of conventional electronics is increasing the importance of electronic contributions from the near surface region while bulk contributions are becoming less important. We report a detailed ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) investigation of the electronic properties of the silicon molecule interface to understand the change in work function and the contributions due to charge transfer (band bending) and surface dipole (electron affinity).