Title :
ZnO nanobridge devices fabricated on carbonized photoresist
Author :
Pelatt, B. ; Huang, C.C. ; Conley, J.F., Jr.
Author_Institution :
Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
The paper presents a novel method of forming electrically integrated ZnO nanobridges in which carbonized photoresist is used as a nucleation layer for selective growth. It has a promising application as nanowire contacts.
Keywords :
II-VI semiconductors; nanofabrication; nanowires; nucleation; photoresists; zinc compounds; ZnO; carbonized photoresist; electrically integrated nanobridge; nanobridge device; nanowire contact; nucleation layer; selective growth; Conductivity; Contacts; Electrodes; Electrons; Intrusion detection; Morphology; Nanoscale devices; Nanowires; Resists; Zinc oxide;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378030
