• DocumentCode
    3054457
  • Title

    ZnO nanobridge devices fabricated on carbonized photoresist

  • Author

    Pelatt, B. ; Huang, C.C. ; Conley, J.F., Jr.

  • Author_Institution
    Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The paper presents a novel method of forming electrically integrated ZnO nanobridges in which carbonized photoresist is used as a nucleation layer for selective growth. It has a promising application as nanowire contacts.
  • Keywords
    II-VI semiconductors; nanofabrication; nanowires; nucleation; photoresists; zinc compounds; ZnO; carbonized photoresist; electrically integrated nanobridge; nanobridge device; nanowire contact; nucleation layer; selective growth; Conductivity; Contacts; Electrodes; Electrons; Intrusion detection; Morphology; Nanoscale devices; Nanowires; Resists; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378030
  • Filename
    5378030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3054457