Modulated exchange and gate oxide thickness effects on surface roughness limited mobility

Many-body effects are modulated by the roughness of the Si-SiO₂ interface of MOSFET, and act like scattering potentials. The theory of surface roughness scattering has considered only the modulation of the Hartree potential. We reformulate the theory to incorporate many-body effects, and show that exchange decreases mobility about 35% with thick gate oxide. We also calculate the dependence of mobility on the oxide thickness. This dependence is influenced by exchange significantly.