The Characterization of KrF Photoresists and the Effect of Different Ultraviolet (UV) Absorption Rates on Line Edge Roughness (LER) for Submicron Technology

Author

Bakri, Ahmad Yusri bin Mohd ; Manaf, Mohd Jeffery ; Abdul Wahab, K.I. ; Ahmad, Madya Ibrahim Bin

Author_Institution

Silterra Malaysia Sdn Bhd, Kulim

fYear

2007

fDate

8-10 Nov. 2007

Firstpage

416

Lastpage

424

Abstract

This research investigates LER characteristics; determine the resist with lowest LER for all process variations and feature size; and investigates the effect of ultraviolet (UV) absorption rates on LER. Three photoresists were evaluated. Characteristics evaluated were depth of focus (DOF), profile, resolution, LER, exposure latitude, iso-dense (I-D) bias and CD linearity. Features tested were from 100nm to 190nm. Results show that resist P0 has the lowest LER with 7.356 3sigma, followed by resist PI and P4 with 3sigma 10.076 and 10.606. In conclusion, low UV absorption rate results in low UV activation, but low photosensitivity and LER. High UV absorption rate results in high exposure latitude, high photosensitivity, but also high LER.

Keywords

electromagnetic wave absorption; krypton compounds; photoresists; surface roughness; ultraviolet radiation effects; CD linearity; KrF; depth of focus; exposure latitude; iso-dense bias; line edge roughness; photoresist; submicron technology; ultraviolet absorption; Chemical processes; Chemical technology; Electromagnetic wave absorption; Integrated circuit technology; Lighting; Manufacturing; Resists; Shape; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing and Technology, 31st International Conference on

Conference_Location

Petaling Jaya

ISSN

1089-8190

Print_ISBN

978-1-4244-0730-9

Electronic_ISBN

1089-8190

Type

conf

DOI

10.1109/IEMT.2006.4456488

Filename

4456488