Title :
Air-spacer Self-Aligned Contact MOSFET for future dense memories
Author :
Park, Jemin ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA
Abstract :
An air-spacer SAC (self-aligned contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.
Keywords :
MOSFET; 3D mixed mode simulation; air-spacer self-aligned contact MOSFET; dense memories; nitride spacer; switching energy; Capacitance; Computational modeling; Contacts; Dielectrics; Etching; Intrusion detection; MOSFET circuits; Plugs; Random access memory; Space technology;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648300
