Title :
Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 gate dielectrics for radiation-tolerant electronics
Author :
Katz, E.J. ; Zhang, Z. ; Hughes, H.L. ; Chung, K.B. ; Lucovsky, G. ; Brillson, L.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
We have combined nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) and spectroscopic ellipsometry (SE) to measure the energies and depth distribution of charge traps in SiO2/SiOx/SiO2 gate dielectrics for radiation-tolerant electronics. It is now known that suboxide layers within silicon-on-oxide (SOI) structures result in Si nanoclusters that can reduce the shift of the flatband voltage by trapping protons formed during hole injection.
Keywords :
cathodoluminescence; dielectric devices; electron traps; ellipsometry; oxidation; silicon compounds; SiO; charge traps; gate dielectrics; nanoscale depth-resolved cathodoluminescence spectroscopy; nanoscale depth-resolved electronic properties; radiation-tolerant electronics; spectroscopic ellipsometry; Annealing; Dielectric measurements; Educational institutions; Electrochemical impedance spectroscopy; Electron traps; Ellipsometry; Energy measurement; Optical films; Physics; Stimulated emission;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378032
