Title :
Advanced annealing strategies for the 32 nm node
Author :
Kampen, C. ; Martinez-Limia, A. ; Pichler, P. ; Burenkov, A. ; Lorenz, J. ; Ryssel, H.
Author_Institution :
Fraunhofer Inst. of Integrated Syst. & Device Technol., Erlangen
Abstract :
In this work, the influences of advanced annealing schemes, spike and flash annealing and combinations of them, on the electrical behavior of modern FD SOI MOSFETs have been investigated by numerical simulations. Process simulations have been performed for comparing the two-dimensional diffusion behavior of the dopants under the different annealing schemes. Device simulations have been performed for making conclusions about how the different annealing schemes are influencing the static and dynamic behavior of modern CMOS devices.
Keywords :
CMOS integrated circuits; MOSFET; annealing; numerical analysis; semiconductor process modelling; silicon-on-insulator; 2D diffusion behavior; CMOS devices; FD SOI MOSFET; electrical behavior; flash annealing; numerical simulations; process simulations; spike annealing; Boron; Doping; Electron devices; Epitaxial growth; MOS devices; MOSFETs; Predictive models; Silicon on insulator technology; Simulated annealing; Temperature distribution;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648301
