Title :
Monte Carlo simulation of Cu-resistivity
Author :
Wang Zhuo Yan ; Du Gang ; Feng, Kang Jin ; Liu Xiao Yan ; Ruqi, Han
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
We have developed an optimized model for electron behavior in Cu-line and we have implemented it using Monte Carlo method. Our model takes into account not only four normal scatterings but also the grain boundary scattering and the surface roughness scattering. The model has been tested with different line width and providing a good agreement with both calculated results and ITRS data.
Keywords :
Monte Carlo methods; copper; electrical resistivity; grain boundaries; integrated circuit interconnections; surface roughness; Monte Carlo simulation; copper resistivity; electron behavior; grain boundary scattering; surface roughness scattering; Acoustic scattering; Conductivity; Copper; Electrons; Grain boundaries; Monte Carlo methods; Phonons; Plasma temperature; Rough surfaces; Surface roughness; Cu-resistivity; Monte Carlo simutlation; gain boundary scattering; surface roughness scattering;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648302
