Title :
Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor
Author :
Sun, Jia ; Devine, Rod ; Dhar, Bal M. ; Jung, Byung Jun ; See, Kevin S. ; Katz, Howard E.
Author_Institution :
Dept. of Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
In this study, bottom contact OFETs with various surface treatments based on 1, 4, 5, 8-naphthalene-teracarboxylic di-imide (NTCDI) derivatives with three different fluorinated N-substituents, systematically investigated with a particular emphasis on the interplay between the morphology of the organic semiconductor films and the electrical device properties. The topography of the NTCDI bottom contact device without any surface treatment was first characterized by AFM.
Keywords :
atomic force microscopy; organic field effect transistors; surface treatment; AFM; bias stress; bottom contact field effect transistor; morphology; naphthalenetetracarboxylic diimide; organic semiconductor films; surface treatments; Electrodes; FETs; Gold; OFETs; Pentacene; Semiconductor films; Stress; Substrates; Surface morphology; Surface topography;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378035
