• DocumentCode
    3054556
  • Title

    Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor

  • Author

    Sun, Jia ; Devine, Rod ; Dhar, Bal M. ; Jung, Byung Jun ; See, Kevin S. ; Katz, Howard E.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this study, bottom contact OFETs with various surface treatments based on 1, 4, 5, 8-naphthalene-teracarboxylic di-imide (NTCDI) derivatives with three different fluorinated N-substituents, systematically investigated with a particular emphasis on the interplay between the morphology of the organic semiconductor films and the electrical device properties. The topography of the NTCDI bottom contact device without any surface treatment was first characterized by AFM.
  • Keywords
    atomic force microscopy; organic field effect transistors; surface treatment; AFM; bias stress; bottom contact field effect transistor; morphology; naphthalenetetracarboxylic diimide; organic semiconductor films; surface treatments; Electrodes; FETs; Gold; OFETs; Pentacene; Semiconductor films; Stress; Substrates; Surface morphology; Surface topography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378035
  • Filename
    5378035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3054556