Atomistic approach for Boron Transient Enhanced Diffusion and clustering

Author

Mauri, Aurelio ; Laurin, Luca ; Montalenti, Francesco ; Benvenuti, Augusto

Author_Institution

Central R&D, STMicroelectronics, Agrate Brianza

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

329

Lastpage

332

Abstract

A kinetic Monte Carlo (KMC) approach has been applied to study the thermal evolution of Boron implant damage and diffusion in bulk silicon in a wide range of temperatures between 700degC and 1100degC , considering furnace, rapid thermal and spike annealing. Boron transient enhanced diffusion (TED) and boron interstitial clustering (up to B₃I₃) have been considered with a consistent set of parameters for all the standard anneal cases, achieving a satisfactory agreement with experimental profiles and providing a good understanding of the main underlying microscopic mechanisms.

Keywords

Monte Carlo methods; annealing; boron; diffusion; elemental semiconductors; interstitials; semiconductor doping; silicon; Si:B; atomistic approach; boron implant damage; boron interstitial clustering; boron transient enhanced diffusion; bulk silicon; clustering; kinetic Monte Carlo approach; microscopic mechanisms; rapid thermal annealing; spike annealing; temperature 700 degC to 1100 degC; Boron; Calibration; Furnaces; Implants; Kinetic theory; Microscopy; Rapid thermal annealing; Semiconductor device modeling; Silicon; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648304

Filename

4648304