Title :
Atomistic approach for Boron Transient Enhanced Diffusion and clustering
Author :
Mauri, Aurelio ; Laurin, Luca ; Montalenti, Francesco ; Benvenuti, Augusto
Author_Institution :
Central R&D, STMicroelectronics, Agrate Brianza
Abstract :
A kinetic Monte Carlo (KMC) approach has been applied to study the thermal evolution of Boron implant damage and diffusion in bulk silicon in a wide range of temperatures between 700degC and 1100degC , considering furnace, rapid thermal and spike annealing. Boron transient enhanced diffusion (TED) and boron interstitial clustering (up to B3I3) have been considered with a consistent set of parameters for all the standard anneal cases, achieving a satisfactory agreement with experimental profiles and providing a good understanding of the main underlying microscopic mechanisms.
Keywords :
Monte Carlo methods; annealing; boron; diffusion; elemental semiconductors; interstitials; semiconductor doping; silicon; Si:B; atomistic approach; boron implant damage; boron interstitial clustering; boron transient enhanced diffusion; bulk silicon; clustering; kinetic Monte Carlo approach; microscopic mechanisms; rapid thermal annealing; spike annealing; temperature 700 degC to 1100 degC; Boron; Calibration; Furnaces; Implants; Kinetic theory; Microscopy; Rapid thermal annealing; Semiconductor device modeling; Silicon; Temperature distribution;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648304
