Atomistic modeling of dopant diffusion and segregation in strained SiGeC

Author

Dunham, Scott T. ; Guo, Hsiu-Wu ; Song, Jakyoung ; Ahn, Chihak

Author_Institution

Dept. of Electr. Eng., Univ. of Washington, Seattle, WA

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

333

Lastpage

336

Abstract

In this work, density functional theory calculations are used to calculate the separate effects of stress/strain and chemical binding on diffusion, segregation and solubility of dopants in group IV alloy materials. Kinetic lattice Monte Carlo calculations are used to extract the effects of anisotropic stress and random alloy distributions. We find that segregation and solubility is dominated by stress effects, but that chemical interactions of Ge and C with point defects have a significant effect on diffusivity in SiGeC alloys.

Keywords

Ge-Si alloys; Monte Carlo methods; carbon; semiconductor materials; stress-strain relations; Monte Carlo calculations; SiGeC; anisotropic stress; atomistic modeling; chemical binding; density functional theory calculations; dopant diffusion; random alloy distributions; stress-strain effects; Anisotropic magnetoresistance; Capacitive sensors; Chemicals; Density functional theory; Germanium alloys; Kinetic theory; Lattices; Monte Carlo methods; Semiconductor process modeling; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648305

Filename

4648305