• DocumentCode
    3054678
  • Title

    Modeling of high-k-Metal-Gate-stacks using the non-equilibrium Green’s function formalism

  • Author

    Baumgartner, O. ; Karner, M. ; Kosina, H.

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Wien
  • fYear
    2008
  • fDate
    9-11 Sept. 2008
  • Firstpage
    353
  • Lastpage
    356
  • Abstract
    A high-k-metal-gate stack has been investigated using an open boundary model based on the non-equilibrium Greenpsilas function formalism. The numerical energy integration, which is crucial because of the very narrow resonant states, is pointed out in detail. The model has been benchmarked against the established classical and closed boundary Schrodinger-Poisson model. In contrast to the established models, the solution covers distinct resonant states with a realistic broadening and results in a major difference in the current density spectrum.
  • Keywords
    Green´s function methods; Poisson equation; Schrodinger equation; integration; transistors; closed boundary Schrodinger-Poisson model; high-k-metal-gate-stacks; nonequilibrium Green´s function; numerical energy integration; open boundary model; Charge carrier density; Current density; Dielectrics; Electrons; Green´s function methods; Leakage current; Microelectronics; Optical scattering; Quantum mechanics; Resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
  • Conference_Location
    Hakone
  • Print_ISBN
    978-1-4244-1753-7
  • Type

    conf

  • DOI
    10.1109/SISPAD.2008.4648310
  • Filename
    4648310