DocumentCode
3054678
Title
Modeling of high-k-Metal-Gate-stacks using the non-equilibrium Green’s function formalism
Author
Baumgartner, O. ; Karner, M. ; Kosina, H.
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Wien
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
353
Lastpage
356
Abstract
A high-k-metal-gate stack has been investigated using an open boundary model based on the non-equilibrium Greenpsilas function formalism. The numerical energy integration, which is crucial because of the very narrow resonant states, is pointed out in detail. The model has been benchmarked against the established classical and closed boundary Schrodinger-Poisson model. In contrast to the established models, the solution covers distinct resonant states with a realistic broadening and results in a major difference in the current density spectrum.
Keywords
Green´s function methods; Poisson equation; Schrodinger equation; integration; transistors; closed boundary Schrodinger-Poisson model; high-k-metal-gate-stacks; nonequilibrium Green´s function; numerical energy integration; open boundary model; Charge carrier density; Current density; Dielectrics; Electrons; Green´s function methods; Leakage current; Microelectronics; Optical scattering; Quantum mechanics; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648310
Filename
4648310
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