Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates

Author

Sampath, Anand V. ; Garrett, Gregory G. ; Readinger, Eric D. ; Shen, Haiying ; Wraback, Michael ; Grandusky, James R. ; Schowalter, Leo J.

Author_Institution

US Army Res. Lab., Adelphi, MD, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

In this paper we report on the structural and optical characterization of NCI-AlGaN active regions grown on bulk AlN substrates. 800 nm-thick NCI AlGaN films having -57% AlN by mole fraction were deposited directly on bulk AlN substrates by plasma-assisted molecular beam epitaxy. The films were characterized optically by temperature dependent cw-photoluminescence (cw-PL) and TRPL, and structurally by X-ray diffraction.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; gallium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; wide band gap semiconductors; AlGaN; AlN; TRPL; UVLED; X-ray diffraction; compositionally inhomogeneous active regions; cw-photoluminescence; nanometer scale; optical characterization; plasma-assisted molecular beam epitaxy; structural characterization; temperature dependent; wavelength 800 nm; Aluminum gallium nitride; Educational institutions; Lattices; Light emitting diodes; Luminescence; Optical films; Photonic band gap; Plasma temperature; Radiative recombination; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378040

Filename

5378040