Analysis of temperature and process variation effects on photo sensor circuits using device/circuit mixed-mode simulations

Author

Mochizuki, M. ; Hayashi, H. ; Chiba, T. ; Fukuda, K.

Author_Institution

Oki Electr. Ind. Co., Ltd., Hachioji

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

369

Lastpage

372

Abstract

Impact of temperature and process variations on the output voltage variations of CMOS photo sensor is discussed. As temperature becomes high, output voltage (Vout) decreases because of the amplifier characteristics. But above 350 K, Vout increases in a weak light intensity range. The process variations have an impact when the operation temperature is high and irradiating light intensity is low. We also estimate influence of additional drive-in process, and find the sensitivities of process variation to increase. To consider both process and temperature variations at the same time, we evaluate Vout variation with mixed-mode simulation.

Keywords

CMOS image sensors; circuit simulation; integrated circuit modelling; mixed analogue-digital integrated circuits; thermal analysis; CMOS photo sensor; device-circuit mixed-mode simulation; light intensity; operation temperature; photosensor circuits; process variation effects; temperature analysis; Analytical models; Circuit simulation; Dark current; Diodes; Photodiodes; Sensitivity analysis; Temperature dependence; Temperature distribution; Temperature sensors; Voltage; mixed-mode simulation; photo sensor; temperature and process variations;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648314

Filename

4648314