Title :
The impact of the breakdown of Ohm´s law on switching delay due to reactive elements connected in series with a micro/nano-resistor
Author :
Arora, Vijay K. ; Bin Hashim, Abdul Manaf ; Chek, Desmond ; Saxena, Tanuj
Author_Institution :
Div. of Eng. & Phys., Wilkes Univ., Wilkes-Barre, PA, USA
Abstract :
The transient effects in a nano/micro-scale channel are severely affected by the resistance blowup due to sublinear current-voltage characteristics leading to velocity and current saturation. This resistance blow-up effect increases the transit-time delay through the device that decreases as length of the conducting channel is decreased, but always larger than that predicted from the application of Ohm´s law. RC time constant is shown to enhance dramatically while RL time constant decreases considerably over and above the predictions of Ohm´s law.
Keywords :
semiconductor device breakdown; Ohm law; reactive elements; resistance blowup; sublinear current-voltage characteristics; switching delay; Delay effects; Educational institutions; Electric breakdown; Electric resistance; Parasitic capacitance; Physics; Resistors; Timing; Virtual colonoscopy; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378044