Title :
Numerical simulation of 4H-SiC deep and vacuum UV photodetectors
Author :
Bolotnikov, Alexander ; Soloviev, Stanislav ; Vert, Alexey ; Rowland, Larry ; Sandvik, Peter
Author_Institution :
Micro & Nanostruct. Technol., Gen. Electr. Global Res. Center, Niskayuna, NY, USA
Abstract :
In conclusion, the design constraints of SiC APD and VUV PD structures are analyzed in order to enhance response at ¿ = 280 and 135nm, while minimizing device leakage current. Definitely experimental confirmation of estimated parameters is required for model validation.
Keywords :
numerical analysis; photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; SiC; numerical simulation; vacuum UV photodetectors; Avalanche photodiodes; Design optimization; Electromagnetic wave absorption; Leakage current; Numerical simulation; Optical surface waves; Photodetectors; Radiative recombination; Silicon carbide; Ultraviolet sources;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378050
