• DocumentCode
    3054913
  • Title

    Numerical simulation of 4H-SiC deep and vacuum UV photodetectors

  • Author

    Bolotnikov, Alexander ; Soloviev, Stanislav ; Vert, Alexey ; Rowland, Larry ; Sandvik, Peter

  • Author_Institution
    Micro & Nanostruct. Technol., Gen. Electr. Global Res. Center, Niskayuna, NY, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In conclusion, the design constraints of SiC APD and VUV PD structures are analyzed in order to enhance response at ¿ = 280 and 135nm, while minimizing device leakage current. Definitely experimental confirmation of estimated parameters is required for model validation.
  • Keywords
    numerical analysis; photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; SiC; numerical simulation; vacuum UV photodetectors; Avalanche photodiodes; Design optimization; Electromagnetic wave absorption; Leakage current; Numerical simulation; Optical surface waves; Photodetectors; Radiative recombination; Silicon carbide; Ultraviolet sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378050
  • Filename
    5378050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3054913