• DocumentCode
    3054922
  • Title

    Simulation toolbox and material parameter data base for CMOS MEMS

  • Author

    Baltes, H. ; Paul, O. ; Korvink, J.G.

  • Author_Institution
    Lab. fur Phys. Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland
  • fYear
    1996
  • fDate
    2-4 Oct 1996
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    The CMOS MEMS CAD tools SOLIDIS and ICMAT are presented. The data base ICMAT is obtained from measuring process dependent CMOS thin film electrical, magnetic, thermal, and mechanical properties by using dedicated materials characterization microstructures. ICMAT is illustrated by thermophysical and mechanical properties of various CMOS layers and novel characterization structures for the thermopower of CMOS polysilicon and the heat capacity of CMOS layer sandwiches. The toolbox SOLIDIS provides coupled numerical modeling of the electrical, magnetic, and mechanical phenomena, and the boundary and interface conditions occurring in Microsystem Technology Computer Aided Design, or μTCAD, in a uniform and consistent environment. An outline of μTCAD and MEMS device simulation is given with a magnetic sensor and a deflectable micromirror serving as examples
  • Keywords
    CAD; CMOS integrated circuits; electronic engineering computing; micromechanical devices; μTCAD; CAD; CMOS MEMS; ICMAT; Microsystem Technology Computer Aided Design; SOLIDIS; boundary conditions; deflectable micromirror; electrical properties; heat capacity; interface conditions; layer sandwich; magnetic sensor; material parameter data base; mechanical properties; numerical model; polysilicon; simulation toolbox; thermal properties; thermopower; thin film; CMOS process; Couplings; Electric variables measurement; Magnetic films; Magnetic materials; Mechanical factors; Mechanical variables measurement; Micromechanical devices; Microstructure; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Machine and Human Science, 1996., Proceedings of the Seventh International Symposium
  • Conference_Location
    Nagoya
  • Print_ISBN
    0-7803-3596-1
  • Type

    conf

  • DOI
    10.1109/MHS.1996.563393
  • Filename
    563393