DocumentCode :
3054935
Title :
Design and analysis of In0.53Ga0.47As/InP symmetric gain optoelectronic mixers
Author :
Zhang, Wang ; Emanetoglu, Nuri W. ; Bambha, Neal ; Bickford, Justin R.
Author_Institution :
Electr. & Comput. Eng., Univ. of Maine, Orono, ME, USA
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, In0.53Ga0.47As/InP heterosrrucrure based symmetric gain optoelectronic mixers were simulated with the Synopsis TCAD Sentaurus tools. These two-dimensional simulations were used to design both the layer structure for growth and the horizontal structure for the photolithography masks.
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; masks; military equipment; mixers (circuits); photolithography; 2D simulation; In0.53Ga0.47As-InP; Synopsis TCAD Sentaurus tool; horizontal structure growth; layer structure design; photolithography masks; symmetric gain optoelectronic mixers; Chirp; Dark current; Doping; Educational institutions; Indium phosphide; Laboratories; Laser radar; Optical sensors; Performance gain; Photodetectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
Type :
conf
DOI :
10.1109/ISDRS.2009.5378053
Filename :
5378053
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3054935
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