Title :
Temperature dependence of the radiation power emitted by a superlattice subject to a high-frequency electric field
Author :
Pavel´ev, D. ; Koshurinov, Yu. ; Demarina, N. ; Ustinov, V. ; Zhukov, A. ; Maleev, N. ; Vasilyev, A. ; Baryshev, A. ; Yagoubov, P. ; Whyborn, N.
Author_Institution :
Radiophys. Dept., Nizhny Novgorod State Univ., Russia
fDate :
27 Sept.-1 Oct. 2004
Abstract :
We present an experimental and theoretical study of the radiation power in the terahertz frequency range emitted by a GaAs/AlAs superlattice at 4-300 K. The non-biased superlattice was driven by an electric field with a frequency of 20 GHz. We measured the power spectrum of output signal and found that a decrease in the physical temperature leads to a significant increase in harmonic content.
Keywords :
III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; microwave frequency convertors; semiconductor superlattices; signal generators; submillimetre wave generation; submillimetre waves; 20 GHz; 4 to 300 K; GaAs-AlAs; GaAs/AlAs superlattice; frequency multipliers; harmonic content; high frequency electric field; microwave frequency convertors; nonbiased superlattice; output signal power spectrum; radiation power emission; temperature dependence; terahertz frequency range emission; Doping; Electrons; Frequency; Gallium arsenide; Ohmic contacts; Power system harmonics; Semiconductor superlattices; Signal generators; Temperature dependence; Voltage;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422064
