Title :
Reliability challenges and recent advances for Cu interconnects
Author :
Ho, Paul S. ; Ki-Don Lee ; Yoon, Sean ; Guotao Wang
Author_Institution :
Lab. for Interconnect & Packaging, Texas Univ., Austin, TX, USA
Abstract :
Summary form only given. This paper discusses the reliability issues for Cu/low k interconnects, focusing on the impact due to the thermomechanical properties of low k dielectrics. Several basic questions arise concerning the dielectric effects on interconnect reliability, including the rate of mass transport, thermal stress and deformation behavior and failure mechanisms. In this paper, we address these issues and highlight some recent advances in understanding and improvement of electromigration (EM) and packaging reliability. We first discuss how materials and processes of the damascene structure lead to distinct characteristics and mechanisms for EM and packaging reliability of Cu interconnects. Then the impact of the low k dielectrics on reliability are discussed by comparing results from Cu/oxide and Cu/low k interconnects. Finally, we discuss recent advances and approaches developed to address these reliability challenges.
Keywords :
copper; deformation; dielectric thin films; electromigration; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; thermal management (packaging); thermal stresses; Cu; Cu/low k interconnects; damascene structure; deformation; electromigration; failure mechanisms; interconnect reliability; low k dielectric thermomechanical properties; mass transport rate; packaging reliability; thermal stress; Assembly; Dielectric materials; Failure analysis; LAN interconnection; Plastic packaging; Polymers; Statistics; Thermal stresses; Thermomechanical processes; Threshold current;
Conference_Titel :
Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, 2004. EuroSimE 2004. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-8420-2
DOI :
10.1109/ESIME.2004.1304017
