DocumentCode
3055024
Title
Electrical characteristics and mechanical limitation of polycrystalline silicon thin film transistor on steel foil under strain
Author
Kuo, Po-Chin ; Jamshidi-Roudbari, Abbas ; Hatalis, Miltiadis
Author_Institution
ECE Dept., Lehigh Univ., Bethlehem, PA, USA
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
In this paper poly-Si thin film transistors (TFT) were fabricated on steel foil substrate. The device electrical behavior was characterized on both tensile and compressive strain as well as its mechanical limitation under strain along the channel direction by bending taken into account the design of flexible electronic circuits when based on this technology.
Keywords
elemental semiconductors; internal stresses; metallic thin films; silicon; steel; thin film transistors; FeCJk; Si; bending; channel direction; compressive strain; electron mobility; flexible electronic circuits; mechanical limitation; polycrystalline silicon thin film transistor; steel foil substrate; tensile property; Capacitive sensors; Electric variables; Silicon; Steel; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378058
Filename
5378058
Link To Document