Title :
Electrical characteristics and mechanical limitation of polycrystalline silicon thin film transistor on steel foil under strain
Author :
Kuo, Po-Chin ; Jamshidi-Roudbari, Abbas ; Hatalis, Miltiadis
Author_Institution :
ECE Dept., Lehigh Univ., Bethlehem, PA, USA
Abstract :
In this paper poly-Si thin film transistors (TFT) were fabricated on steel foil substrate. The device electrical behavior was characterized on both tensile and compressive strain as well as its mechanical limitation under strain along the channel direction by bending taken into account the design of flexible electronic circuits when based on this technology.
Keywords :
elemental semiconductors; internal stresses; metallic thin films; silicon; steel; thin film transistors; FeCJk; Si; bending; channel direction; compressive strain; electron mobility; flexible electronic circuits; mechanical limitation; polycrystalline silicon thin film transistor; steel foil substrate; tensile property; Capacitive sensors; Electric variables; Silicon; Steel; Thin film transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378058
