Title :
High-mobility enhancement-mode 4H SiC lateral nMOSFETs with atomic layer deposited Al2O3 gate dielectric
Author :
Lichtenwalner, D.J. ; Misra, V. ; Dhar, S. ; Ryu, S.-H. ; Agarwal, A.
Author_Institution :
Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this study, MOSFETs were fabricated on CREE Si-face 4H SiC p-type epilayers on ntype substrates. An initial SiC sacrificial oxidation and etch was performed, after which device active areas were formed by implantation and anneal.
Keywords :
MOSFET; aluminium compounds; atomic layer deposition; silicon compounds; wide band gap semiconductors; Al2O3; SiC; atomic layer deposited gate dielectric; high-mobility enhancement-mode; nMOSFET; ntype substrates; p-type epilayers; sacrificial oxidation; Aluminum oxide; Annealing; Atomic layer deposition; Capacitance-voltage characteristics; Dielectric substrates; Iron; MOSFETs; Oxidation; Power engineering and energy; Silicon carbide;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378059
