• DocumentCode
    3055057
  • Title

    High-mobility enhancement-mode 4H SiC lateral nMOSFETs with atomic layer deposited Al2O3 gate dielectric

  • Author

    Lichtenwalner, D.J. ; Misra, V. ; Dhar, S. ; Ryu, S.-H. ; Agarwal, A.

  • Author_Institution
    Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this study, MOSFETs were fabricated on CREE Si-face 4H SiC p-type epilayers on ntype substrates. An initial SiC sacrificial oxidation and etch was performed, after which device active areas were formed by implantation and anneal.
  • Keywords
    MOSFET; aluminium compounds; atomic layer deposition; silicon compounds; wide band gap semiconductors; Al2O3; SiC; atomic layer deposited gate dielectric; high-mobility enhancement-mode; nMOSFET; ntype substrates; p-type epilayers; sacrificial oxidation; Aluminum oxide; Annealing; Atomic layer deposition; Capacitance-voltage characteristics; Dielectric substrates; Iron; MOSFETs; Oxidation; Power engineering and energy; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378059
  • Filename
    5378059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3055057