Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs

In the present work, we show that electrodeposited Ni/Ge and NiGe/Ge SBs formed even on highly n-doped Ge exhibit near ideal Schottky barrier behavior with very low reverse leakage current. In order to suppress source-to-drain leakage currents in short channel SB-pMOSFETs, a highly n-doped substrate should be used. The low off-current exhibited by electrodeposited SBs on highly doped Ge might make this possible limiting the junction leakage current at the drain/body contact.