Title :
Electro-thermal transistor models in the SISSI electro-thermal IC simulator
Author :
Székely, V. ; Poppe, A. ; Hajas, G.
Author_Institution :
Dept. of Electron Devices, Budapest Univ. of Technol. & Econ., Hungary
Abstract :
This paper deals with the modeling solutions and the verification of an electro-thermal simulation program. A method to extend conventional device models to electro-thermal ones is presented. The modeling of special electro-thermal devices such as e.g. the integrated thermocouple is discussed. In order to verify the electro-thermal models, measurement and simulation results are compared. The target device of these investigations is an operational amplifier chip. Several layout arrangements are considered, and the relationship between the layout and the distortions of the electrical operation caused by the thermal feedback is discussed. As a second example, the measured and simulated characteristics of a MEMS electro-thermal converter is compared. The paper deals both with steady-state and dynamic investigations.
Keywords :
circuit simulation; convertors; integrated circuit modelling; micromechanical devices; operational amplifiers; semiconductor device models; thermal analysis; thermocouples; MEMS electro-thermal converter; SISSI electro-thermal IC simulator; dynamic operation; electro-thermal transistor models; integrated thermocouple; operational amplifier chip; steady-state operation; thermal feedback induced electrical operation distortions; Circuit simulation; Coupling circuits; Distortion measurement; Electronic circuits; Electronic packaging thermal management; Integrated circuit modeling; Resistors; Semiconductor device measurement; Temperature; Voltage;
Conference_Titel :
Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, 2004. EuroSimE 2004. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-8420-2
DOI :
10.1109/ESIME.2004.1304029