• DocumentCode
    3055357
  • Title

    ZnxCd1−xSe/ ZnyCd1−ySe quantum dot floating gate nonvolatile memory

  • Author

    Al-Amoody, F. ; Suarez, E. ; Rodriguez, A. ; Heller, E. ; Ayers, J. ; Jain, F.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of Connecticut, Storrs, CT, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presents a floating quantum dot gate nonvolatile memory device using high energy gap ZriyCdi.ySe cladded Zn¿Cdi.¿Se quantum dots (y>x) with tunneling layers comprised of nearly lattice-matched semiconductors (e.g. ZnS/ZnMgS). The quantum dots were grown on ptype silicon between the source and drain regions. The quantum dots were nucleated in a photoassisted microwave plasma (PMP) metalorganic chemical vapor deposition reactor.
  • Keywords
    MOCVD; random-access storage; semiconductor quantum dots; zinc compounds; ZnCdSe; high energy gap; lattice-matched semiconductors; photoassisted microwave plasma metalorganic chemical vapor deposition reactor; quantum dot floating gate nonvolatile memory; Microwave devices; Nonvolatile memory; Plasma chemistry; Plasma devices; Plasma sources; Portable media players; Quantum dots; Silicon; Tunneling; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378076
  • Filename
    5378076
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3055357