Title :
Terahertz radiation from InAs film on Si substrate
Author :
Que, C.T. ; Tan, M. ; Edamura, T. ; Nakajima, Masahiro ; Hangyo, M.
Author_Institution :
Inst. of Laser Eng., Osaka Univ., Japan
fDate :
27 Sept.-1 Oct. 2004
Abstract :
Using ultrafast laser pulses, emission of THz radiation from InAs films grown on Si substrates is investigated. THz radiation from the InAs films with different film-thickness are measured in transmission geometry and compared to that of a bulk InAs substrate in the reflection geometry. The strongest THz emission is found from the thickest 520-nm film.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; luminescence; semiconductor epitaxial layers; submillimetre wave spectra; 520 nm; InAs; InAs film growth; Si; Si substrate; THz radiation emission; film-thickness; reflection geometry; terahertz radiation emission; transmission geometry; ultrafast laser pulses; Laser excitation; Laser modes; Nonlinear optics; Optical films; Semiconductor films; Semiconductor lasers; Stimulated emission; Substrates; Surface emitting lasers; Surges;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422078
