Role of fin thickness on ballistic transport in nanoscale FinFETs

Author

Islam, Raisul ; Amin, Emran Md. ; Baten, Md Zunaid ; Khosru, Quazi D M

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

Performance limit of tri-gate (TG) and double gate (DG) SOI FinFETs have been compared in terms of ballistic current which is calculated by using a modified model shown for conventional MOSFET. Such a simple model for calculating ballistic current in nanoscale multigate MOSFETs is yet to be reported. Comparison of the ballistic current for different Si fin thicknesses reveals that for decreasing fin thickness, strong quantum mechanical confinement degrades the ballistic current. The simulation result presented here contradicts with the previously reported result that TG FinFETs always show better performance than DG FinFETs and reveals that DG FinFETs show slightly better performance below 5nm fin thickness. This result indicates that in terms of ballistic drive current the tri-gate device is not always favorable than double gate device especially when the device dimension is scaled down deeply.

Keywords

MOSFET; ballistic transport; silicon-on-insulator; ballistic transport; double gate SOI FinFET; fin thickness; nanoscale FinFET; quantum mechanical confinement; tri-gate SOI FinFET; Ballistic transport; Degradation; Educational institutions; FinFETs; MOSFET circuits; Paper technology; Potential well; Quantum mechanics; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378078

Filename

5378078