DocumentCode
3055417
Title
Horizontally grown ZnO nanowires and their application in addressable arrays of one-dimensional p-n heterojunctions
Author
Nikoobakht, Babak ; Herzing, Andrew
Author_Institution
Surface & Microanalysis Sci. Div., Nat. Inst. of Stand. & Technol., MD, USA
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
In this presentation, we present a simple methodology for formation and hierarchical assembly of electrically addressable nanowire-based semiconductor heterojunctions. These p-n junctions are oriented and formed epitaxially by planar growth of nanowires on a semiconductor substrate, as opposed to conventional approaches that use mechanical contacts. We demonstrate a practical two-step approach for scalable electrical injection into these nanowire heterojunctions. The formed heterojunctions are grown from arrays of zinc oxide nanowires and nanowalls on a semiconductor substrate. We show their blue and orange-color light emissions depending on the polarity of the applied voltage. The developed architecture could be a general methodology for fabricating addressable assemblies of nanowires useful in photovoltaics and photodetectors.
Keywords
II-VI semiconductors; nanowires; p-n heterojunctions; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds; 1D p-n heterojunctions; addressable arrays; horizontally grown nanowires; mechanical contacts; photodetectors; photovoltaics; semiconductor heterojunctions; semiconductor substrate; Assembly; Contacts; Heterojunctions; Nanowires; P-n junctions; Photodetectors; Photovoltaic cells; Substrates; Voltage; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378079
Filename
5378079
Link To Document