DocumentCode :
3055457
Title :
A new description of CMOS circuits at switch-level
Author :
Pedram, Massoud ; Wu, Xunwei
Author_Institution :
Dept. of Electr. Eng. Syst., Univ. of Southern California, Los Angeles, CA, USA
fYear :
1997
fDate :
28-31 Jan 1997
Firstpage :
551
Lastpage :
556
Abstract :
After analyzing the limitations of the traditional description of CMOS circuits at the gate level, this paper introduces the notions of switching and signal variables for describing the switching states of MOS transistors and signals in CMOS circuits, respectively. Two connection operations for describing the interaction between MOS transistors and signals and a new description for CMOS circuits at the switch level are presented. This new description can be used to express the functional relationship between inputs and the output at the switch level. It can also be used to describe the circuit structure composed of various transistor switches. Based on the new description, the design of CMOS circuits at the switch level can be efficiently realized. It is expected that this will provide a basis for techniques for analyzing and optimizing the delay and power dissipation of CMOS circuits
Keywords :
CMOS logic circuits; delays; field effect transistor switches; network analysis; switching theory; CMOS circuits; MOS transistors; circuit delay; connection operations; gate-level description; input-output functional relationship; optimization; power dissipation; signal variables; switch-level description; switching states; switching variables; Boolean algebra; Contracts; Delay; Inverters; MOSFETs; Power dissipation; Signal analysis; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference, 1997. Proceedings of the ASP-DAC '97 Asia and South Pacific
Conference_Location :
Chiba
Print_ISBN :
0-7803-3662-3
Type :
conf
DOI :
10.1109/ASPDAC.1997.600333
Filename :
600333
Link To Document :
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