Characteristics of InAs quantum dot superluminescent diodes utilizing trench structures

Author

Yoo, Young Chae ; Han, Il Ki ; Lee, Jung Il ; Lee, Joo In ; Kim, Eun Kyu

Author_Institution

Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

In this paper, the trench structure of J-shaped superluminescent diodes (SLDs) was utilized in order to avoid optical power loss with week index waveguides. Electroluminescence (EL) were measured with the increase of injection current. The EL peaks were normalized to the peak intensity of the ground state. Without trench structure the increase in peak intensity of the excited state would not have occurred. It was believed that the SLDs optical power increase was closely related to the increase of the intensity peak at excited state.

Keywords

III-V semiconductors; electroluminescence; electroluminescent devices; excited states; ground states; indium compounds; semiconductor quantum dots; superluminescent diodes; InAs; electroluminescence; excited state; ground state; injection current; optical power loss; peak intensity; quantum dot superluminescent diodes; trench structures; week index waveguides; Current measurement; Diode lasers; Educational institutions; Etching; Fabry-Perot; Optical microscopy; Optical waveguides; Quantum dots; Stimulated emission; Superluminescent diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378085

Filename

5378085