Title :
Parameter calibration on post-ion-implantation dopant diffusions
Author :
Fu, J. ; Crans, W. ; Eysenga, W.J.
Author_Institution :
X-FAB Semicond. foundries AG, Erfurt, Germany
Abstract :
Model parameters used to describe post-implant arsenic and boron diffusions were selected with care and calibrated by using the inverse modeling optimizer "PROFILE". The parameter calibrations performed were based on the best fitting of numerical process simulation to the corresponding experimental SIMS (secondary ion mass spectrometry) measurement data. In this case, grouped model parameters were calibrated in cascade, resulting in good reproduction of dopant depth profiles. On the basis of the extracted parameters, together with the corresponding uncertainties for calibration, the dopant diffusion kinetics and mechanisms were analyzed and discussed.
Keywords :
arsenic; boron; calibration; diffusion; doping profiles; ion implantation; secondary ion mass spectroscopy; semiconductor process modelling; As; B; calibration uncertainties; diffusion parameter calibration; dopant depth profiles; dopant diffusion kinetics mechanisms; experimental SIMS measurements; inverse modeling optimization; numerical process simulation; post-ion-implantation dopant diffusions; secondary ion mass spectrometry; Annealing; Application specific integrated circuits; Calibration; Circuit simulation; Inverse problems; Ion implantation; Mass spectroscopy; Predictive models; Semiconductor process modeling; Silicon;
Conference_Titel :
Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, 2004. EuroSimE 2004. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-8420-2
DOI :
10.1109/ESIME.2004.1304040