Title :
Investigation of strain relaxation in patterned strained silicon-on-insulator structures by Raman spectroscopy and computer simulation
Author :
Gu, D. ; Naumann, F. ; Petzold, M. ; Zhu, M. ; Baumgart, H.
Author_Institution :
Appl. Res. Center, Old Dominion Univ., Newport News, VA, USA
Abstract :
The authors study the simplest but scientifically relevant case, where in the absence of capping layers or any other precautions, strain relaxation by film patterning and high temperature annealing can be observed. The thermal stability of bi-axial strain is maintained solely by a nonepitaxial bonded interface with the amorphous buried oxide in sSOI after patterning and subsequent high temperature annealing.
Keywords :
Raman spectroscopy; annealing; nanopatterning; relaxation; silicon-on-insulator; thermal stability; Raman spectroscopy; amorphous buried oxide; bi-axial strain; capping layers; computer simulation; film patterning; nonepitaxial bonded interface; patterned strained silicon-on-insulator structures; strain relaxation; temperature annealing; thermal stability; Amorphous materials; Annealing; Bonding; Capacitive sensors; Computer simulation; Raman scattering; Silicon on insulator technology; Spectroscopy; Temperature; Thermal stability;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378087
