DocumentCode
3055575
Title
Methane sensing properties of Cux O thin films deposited by pulsed laser deposition
Author
Stamataki, M. ; Georgiou, V. ; Tsamakis, D. ; Kompitsas, M.
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Nat. Tech. Univ. of Athens, Athens, Greece
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
In the present work, undoped CuxO thin films were deposited by pulsed laser deposition on glass and SiO2 substrates, at a constant oxygen partial pressure of 40Pa and at constant temperature of 200°C. The surface morphology of the deposited thin films was investigated by atomic force microscopy (AFM) in contact mode. The paper shows the 3D AFM images of CuxO thin films deposited on glass and SiO2 substrate, respectively. We noted that the substrate type had an effect on the surface morphology of the films; the one on glass substrate was smoother than the other on SiO2 substrate with an average roughness around 6nm for a scanning area of 2¿mx2¿m.
Keywords
atomic force microscopy; copper compounds; gas sensors; glass; organic compounds; pulsed laser deposition; silicon compounds; substrates; surface morphology; thin films; CuxO; SiO2; atomic force microscopy; glass substrates; methane sensing properties; pressure 40 Pa; pulsed laser deposition; surface morphology; temperature 200 degC; thin films; Atomic beams; Atomic force microscopy; Atomic layer deposition; Glass; Laser modes; Optical pulses; Pulsed laser deposition; Sputtering; Surface morphology; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378089
Filename
5378089
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