Title :
Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers
Author :
Cojocari, O. ; Popa, V. ; Ursaki, V.V. ; Tiginyanu, I.M. ; Mutamba, K. ; Saglam, M. ; Hartnagel, H.L.
Author_Institution :
Inst. of Appl. Phys., Tech. Univ. of Moldova, Moldova
fDate :
27 Sept.-1 Oct. 2004
Abstract :
Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality are studied using PL-measurements and electrical characterisation. DC-characteristics of 5 μm-diameter anodes result in a cut-off frequency of 390 GHz. The perspectives of GaN-diodes for THz-frequency multipliers are discussed.
Keywords :
III-V semiconductors; MOCVD; Schottky diodes; annealing; frequency multipliers; gallium compounds; passivation; photoluminescence; platinum; semiconductor device metallisation; varactors; wide band gap semiconductors; 390 GHz; 5 micron; DC characteristics; MM-wave frequency multipliers; MOCVD; PL measurements; Pt-GaN; Pt/n-GaN Schottky diodes; THz-frequency multipliers; anode metallisation; cut off frequency; electrical characterisation; electrochemical method; micrometer size GaN Schottky diodes; surface passivation; thermal annealing; Annealing; Anodes; Capacitance-voltage characteristics; Etching; Frequency; Gallium nitride; Metallization; Passivation; Schottky diodes; Storage area networks;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422084
