Title :
Operation regimes of double gated graphene nanoribbon FETs
Author :
Tahy, K. ; Chuanxin Lian ; Huili Xing ; Jena, D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
In the past we demonstrated these properties in double-gated graphene nanoribbon field effect transistors (GNR FETs). We successfully achieved I??n/Ioff ratios of 106 at cryogenic temperatures using either top- or back-gates and sublinear output characteristic was observed. Now we present the detailed analysis of the distinct operational modes of such devices at high applied source-drain field.
Keywords :
field effect transistors; graphene; nanostructured materials; GNR FET; cryogenic temperatures; double gated graphene nanoribbon FET; field effect transistors; operation regimes; operational modes; source-drain field; sublinear output characteristic; Aluminum oxide; CMOS technology; Conductivity; Double-gate FETs; Educational institutions; Gold; Photonic band gap; Switches; Temperature dependence; Temperature measurement;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
DOI :
10.1109/ISDRS.2009.5378091
