Title :
AlInN/ GaN heterostructure field-effect transistors
Author :
Yang, Jinwey ; Hu, Xuhong ; Deng, Jianyu ; Gaska, Remis ; Shur, Michael ; Simin, Grigory
Author_Institution :
Sensor Electron. Technol. Inc., Columbia, SC, USA
Abstract :
We report on AlInN/GaN Heterostructure Field-Effect Transistors grown by MEMOCVD technique with virtually Ga-free AlInN layers.
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlInN-GaN; MEMOCVD technique; heterostructure field-effect transistors; Aluminum gallium nitride; Contact resistance; Educational institutions; Electron mobility; Gallium nitride; HEMTs; MODFETs; Pulse amplifiers; Space technology; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378095
