• DocumentCode
    3055750
  • Title

    AlInN/ GaN heterostructure field-effect transistors

  • Author

    Yang, Jinwey ; Hu, Xuhong ; Deng, Jianyu ; Gaska, Remis ; Shur, Michael ; Simin, Grigory

  • Author_Institution
    Sensor Electron. Technol. Inc., Columbia, SC, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on AlInN/GaN Heterostructure Field-Effect Transistors grown by MEMOCVD technique with virtually Ga-free AlInN layers.
  • Keywords
    III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlInN-GaN; MEMOCVD technique; heterostructure field-effect transistors; Aluminum gallium nitride; Contact resistance; Educational institutions; Electron mobility; Gallium nitride; HEMTs; MODFETs; Pulse amplifiers; Space technology; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378095
  • Filename
    5378095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3055750