• DocumentCode
    3055911
  • Title

    Operation of carbon nanotube thin-film transistors at elevated temperatures

  • Author

    Ozturk, S. ; Dogan, M. ; Aktas, O.

  • Author_Institution
    Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The authors study the operation of carbon nanotube thin-film transistors (CNT-TFT) at elevated temperatures. Due to the small bandgap of semiconducting carbon nanotubes, CNT-TFTs are not suitable to be developed as high-temperature devices. However, CNT-TFTs will still have to endure elevated temperatures when employed in large-area and flexible electronic applications. The temperature range that can be expected in these applications is well below 100°C. In this work, the authors demonstrate that even at 100°C, CNT-TFT devices are operational but with a reduced ON/OFF ratio. Beyond 100°C, the ON/OFF ratio degrades rapidly.
  • Keywords
    carbon nanotubes; thin film transistors; C; semiconducting carbon nanotubes; small bandgap; temperature devices; thin film transistors; Carbon nanotubes; Current-voltage characteristics; Educational institutions; Oxidation; Plasma measurements; Plasma temperature; Schottky barriers; Testing; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378102
  • Filename
    5378102