Title :
A novel wave-guide Ge:Ga photoconductor
Author :
Hosako, Iwao ; Hiromoto, Nonhisa
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
fDate :
27 Sept.-1 Oct. 2004
Abstract :
A wave-guide gallium-doped germanium (Ge:Ga) extrinsic photoconductor coupled to a silicon solid-immersion lens was developed. A linear-array configuration was automatically achieved via the fabrication process. The typical distance between the electrodes was designed to be 0.050 mm (∼2 wavelength/refractive index), which is about one-tenth of that in conventional Ge:Ga photoconductors. The short distance between the electrodes resulted in high responsivity and low noise characteristics.
Keywords :
dielectric-loaded waveguides; electrodes; elemental semiconductors; gallium; germanium; impurity distribution; infrared detectors; lenses; optical arrays; optical fabrication; optical noise; photoconducting devices; photodetectors; rectangular waveguides; refractive index; silicon; 0.050 mm; Ge-Si:Ga; electrodes; gallium doped germanium photoconductor; noise properties; optical array; optical noise; rectangular waveguide; refractive index; silicon solid immersion lens; Compressive stress; Electrodes; Fabrication; Face detection; Infrared detectors; Lenses; Optical waveguides; Photoconductivity; Sensor arrays; Silicon;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422098
