THz luminescence from n-type QW heterostructures under intraband photo-excitation

Author

Bekin, N. ; Zhukavin, R. ; Kovalevsky, K. ; Zvonkov, B. ; Uskova, E. ; Pavlov, S. ; Shastin, V.

Author_Institution

Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

343

Lastpage

344

Abstract

THz spontaneous emission (≈3+3.5 THz) based on 2D-continuum-shallow donor (Si) states transitions has been investigated from both GaAs/InGaAs:Si and GaAs/InGaAsP:Si selectively doped heterostructures excited by CO₂ laser radiation. It is shown that the population inversion and the amplification with the coefficient up to 100+300 cm^-1 per active layer be realized for planar doping level N_D≈10¹¹ cm^-2 in multilayer structures with 50 periods of quantum wells under pump flux density 10²³ quant/(cm²·s).

Keywords

III-V semiconductors; doping profiles; gallium arsenide; gallium compounds; impurity states; indium compounds; laser beam effects; luminescence; multilayers; optical pumping; population inversion; semiconductor heterojunctions; semiconductor quantum wells; silicon; spontaneous emission; 2D continuum shallow donor Si states; CO₂ laser radiation; GaAs-InGaAs:Si; GaAs-InGaAsP:Si; THz luminescence; THz spontaneous emission; intraband photoexcitation; multilayer structures; n-type QW heterostructures; planar doping level; population inversion; pump flux density; quantum wells; Electron optics; Gallium arsenide; Laser excitation; Luminescence; Optical filters; Optical pumping; Optical scattering; Optical sensors; Optical superlattices; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422099

Filename

1422099