Title :
THz luminescence from n-type QW heterostructures under intraband photo-excitation
Author :
Bekin, N. ; Zhukavin, R. ; Kovalevsky, K. ; Zvonkov, B. ; Uskova, E. ; Pavlov, S. ; Shastin, V.
Author_Institution :
Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia
fDate :
27 Sept.-1 Oct. 2004
Abstract :
THz spontaneous emission (≈3+3.5 THz) based on 2D-continuum-shallow donor (Si) states transitions has been investigated from both GaAs/InGaAs:Si and GaAs/InGaAsP:Si selectively doped heterostructures excited by CO2 laser radiation. It is shown that the population inversion and the amplification with the coefficient up to 100+300 cm-1 per active layer be realized for planar doping level ND≈1011 cm-2 in multilayer structures with 50 periods of quantum wells under pump flux density 1023 quant/(cm2·s).
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; gallium compounds; impurity states; indium compounds; laser beam effects; luminescence; multilayers; optical pumping; population inversion; semiconductor heterojunctions; semiconductor quantum wells; silicon; spontaneous emission; 2D continuum shallow donor Si states; CO2 laser radiation; GaAs-InGaAs:Si; GaAs-InGaAsP:Si; THz luminescence; THz spontaneous emission; intraband photoexcitation; multilayer structures; n-type QW heterostructures; planar doping level; population inversion; pump flux density; quantum wells; Electron optics; Gallium arsenide; Laser excitation; Luminescence; Optical filters; Optical pumping; Optical scattering; Optical sensors; Optical superlattices; Stimulated emission;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422099
