Title :
Low field mobility in AlGaN/InGaN MOS-HFETs from cold-FET measurements
Author :
Dandu, K. ; Morgensen, M. ; Saripalli, Y. ; Barlage, D.W. ; Johnson, M.A.L. ; Braddock, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Low field mobility can be experimentally determined using high-frequency S-parameter measurements. The extraction procedure used is based on the capacitance-conductance method commonly used for MOSFETs and is used to estimate the low field mobility in 0.25 ¿m AlGaN/InGaN MOS-HFETs. Extraction primarily depends on channel conductance and charge sheet density.
Keywords :
III-V semiconductors; MOSFET; S-parameters; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device measurement; wide band gap semiconductors; AlGaN-InGaN; MOS-HFET; capacitance-conductance method; channel conductance; charge sheet density; cold-FET measurement; high-frequency S-parameter measurements; low field mobility; Aluminum gallium nitride; Educational institutions; Electrical resistance measurement; Equations; FETs; MOSFETs; Materials science and technology; Parasitic capacitance; Scattering parameters; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378109
