Rupture tests on polysilicon films through on-chip electrostatic actuation [MEMS applications]

Author

Cacchione, Fabrizio ; De Masi, Biagio ; Corigliano, Alberto ; Ferrera, Marco

Author_Institution

Dept. of Struct. Eng., Politecnico di Milano, Italy

fYear

2004

fDate

2004

Firstpage

347

Lastpage

350

Abstract

A set of rotational test structures for on-chip fracture characterization of 0.7 μm thick polysilicon film have been designed, modeled and fabricated. The structures are actuated by a large number of comb-fingers capacitors which develop a force sufficient to load the specimens in bending up to rupture. A 3D FE model of the whole structures was used during the design phase. Tests were carried out at room temperature and at atmospheric humidity. The measured Young modulus of the tested polysilicon was 182±9 GPa. The low dispersion around the mean value confirms the quality and the good reliability of the whole procedure. Rupture stresses computed after the application of Weibull theory were 1875±333 MPa.

Keywords

Weibull distribution; Young´s modulus; bending; electrostatic actuators; elemental semiconductors; finite element analysis; fracture toughness testing; semiconductor thin films; silicon; 0.7 micron; 191 to 173 GPa; 2208 to 1542 MPa; 3D FE model; MEMS; Si; Weibull theory; Young modulus measurement; bending load testing; comb-finger capacitor actuators; fracture characterization rotational test structures; on-chip electrostatic actuation; polysilicon film rupture tests; rupture stresses; Atmospheric measurements; Atmospheric modeling; Capacitors; Electrostatic actuators; Humidity; Iron; Micromechanical devices; Temperature; Testing; Young´s modulus;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, 2004. EuroSimE 2004. Proceedings of the 5th International Conference on

Print_ISBN

0-7803-8420-2

Type

conf

DOI

10.1109/ESIME.2004.1304062

Filename

1304062