Title :
Interlayered dielectric planarization with TEOS-CVD and SOG
Author :
Kawai, Masato ; Matsuda, Kenzo ; Miki, Kazumi ; Sakiyama, Keizo
Author_Institution :
Sharp Corp., Inc., Nara, Japan
Abstract :
Spin-on-glass (SOG) and TEOS-CVD based methods were examined in connection with the planarization of the intermediate dielectric between lower and upper aluminum connections. TEOS-based PECVD and thermal CVD processes are examined as a combination which has the ability to fully planarize the narrow ( approximately 0.1- mu m) spaces between fine first aluminum lines. The combination of TEOS CVD with SOG results in almost complete planarization, extending from the wider spaces down to submicrometer space.<>
Keywords :
chemical vapour deposition; dielectric thin films; integrated circuit technology; metallisation; organic compounds; Al connections; PECVD; SOG; TEOS-CVD; interlayered dielectric planarisation; tetraethylorthosilicate; thermal CVD; Aluminum; Design automation; Dielectrics; Metallization; Planarization; Plasma temperature; Resists; Sputter etching; Testing; Topology;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location :
Santa Clara, CA, USA
DOI :
10.1109/VMIC.1988.14221
