Optical switching in active InGaAsP/InP directional coupler

Author

D´Orazio, A. ; Ficarella, G. ; Etruzzelli, V.I. ; Prudenzano, F.

Author_Institution

Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Italy

Volume

2

fYear

1996

fDate

13-16 May 1996

Firstpage

674

Abstract

The optical switching behaviour of a traveling wave active directional coupler in InGaAsP/InP under optical control is investigated. The best configuration of bar and cross-state has been found by implementing two homemade BPM versions based on the method of lines and on the finite difference suitably adapted for active device analyses. The effect of the longitudinal diffusion of the charge density is accounted by the BPM, too. For a device length L=1485 μm we have obtained a good cross-state with crosstalk CT_cs-20 dB and gain G_cs=17.4 dB, whereas the best bar-state, with CT_bs=-9.2 dB and G_bs=3.6 dB, is not completely reached

Keywords

III-V semiconductors; carrier density; electro-optical switches; finite difference methods; gallium arsenide; gallium compounds; indium compounds; optical crosstalk; optical directional couplers; optical waveguide theory; 1485 mum; 17.4 dB; 3.6 dB; BPM versions; InGaAsP-InP; active InGaAsP/InP directional coupler; active device analyses; bar state configuration; charge density; cross-state configuration; crosstalk; device length; finite difference; longitudinal diffusion; method of lines; optical control; optical switching; traveling wave active directional coupler; Directional couplers; Finite difference methods; Indium phosphide; Optical bistability; Optical control; Optical coupling; Optical crosstalk; Optical propagation; Power semiconductor switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean

Conference_Location

Bari

Print_ISBN

0-7803-3109-5

Type

conf

DOI

10.1109/MELCON.1996.551309

Filename

551309