Title :
Optical switching in active InGaAsP/InP directional coupler
Author :
D´Orazio, A. ; Ficarella, G. ; Etruzzelli, V.I. ; Prudenzano, F.
Author_Institution :
Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Italy
Abstract :
The optical switching behaviour of a traveling wave active directional coupler in InGaAsP/InP under optical control is investigated. The best configuration of bar and cross-state has been found by implementing two homemade BPM versions based on the method of lines and on the finite difference suitably adapted for active device analyses. The effect of the longitudinal diffusion of the charge density is accounted by the BPM, too. For a device length L=1485 μm we have obtained a good cross-state with crosstalk CTcs-20 dB and gain Gcs=17.4 dB, whereas the best bar-state, with CTbs =-9.2 dB and Gbs=3.6 dB, is not completely reached
Keywords :
III-V semiconductors; carrier density; electro-optical switches; finite difference methods; gallium arsenide; gallium compounds; indium compounds; optical crosstalk; optical directional couplers; optical waveguide theory; 1485 mum; 17.4 dB; 3.6 dB; BPM versions; InGaAsP-InP; active InGaAsP/InP directional coupler; active device analyses; bar state configuration; charge density; cross-state configuration; crosstalk; device length; finite difference; longitudinal diffusion; method of lines; optical control; optical switching; traveling wave active directional coupler; Directional couplers; Finite difference methods; Indium phosphide; Optical bistability; Optical control; Optical coupling; Optical crosstalk; Optical propagation; Power semiconductor switches; Switching circuits;
Conference_Titel :
Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean
Conference_Location :
Bari
Print_ISBN :
0-7803-3109-5
DOI :
10.1109/MELCON.1996.551309
