Title :
Application of a novel test system to characterize single-event transients at cryogenic temperatures
Author :
Ramachandran, Vishwanath ; Gadlage, Matthew J. ; Ahlbin, Jonathan R. ; Alles, Michael L. ; Reed, Robert A. ; Bhuva, Bharat L. ; Massengill, Lloyd W. ; Black, Jeffrey D. ; Foster, Christopher N.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
This manuscript presents details of a customized test system that enables carrying out broadbeam heavy ion SEE radiation testing of semiconductor devices at cryogenic temperatures, while the device is biased and operational, and its application to measure the temperature dependence of single event transients in a CMOS circuit. The cryogenic test system is lightweight and portable, and allows use of either liquid nitrogen (LN2, boiling point -196°C) or liquid helium (LHe, boiling point -269°C). The semiconductor device under test (DUT) can be tested either as a bare die affixed to a custom cold finger or as part of a printed circuit board (PCB) circuit.
Keywords :
CMOS integrated circuits; printed circuits; radiation hardening (electronics); semiconductor device testing; CMOS circuit; cryogenic test system; heavy ion radiation testing; printed circuit board; semiconductor device testing; single-event transients; Circuit testing; Cryogenics; Helium; Nitrogen; Semiconductor device measurement; Semiconductor device testing; Semiconductor devices; System testing; Temperature dependence; Temperature measurement;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378111
