Application of a novel test system to characterize single-event transients at cryogenic temperatures

Author

Ramachandran, Vishwanath ; Gadlage, Matthew J. ; Ahlbin, Jonathan R. ; Alles, Michael L. ; Reed, Robert A. ; Bhuva, Bharat L. ; Massengill, Lloyd W. ; Black, Jeffrey D. ; Foster, Christopher N.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

This manuscript presents details of a customized test system that enables carrying out broadbeam heavy ion SEE radiation testing of semiconductor devices at cryogenic temperatures, while the device is biased and operational, and its application to measure the temperature dependence of single event transients in a CMOS circuit. The cryogenic test system is lightweight and portable, and allows use of either liquid nitrogen (LN₂, boiling point -196Â°C) or liquid helium (LHe, boiling point -269Â°C). The semiconductor device under test (DUT) can be tested either as a bare die affixed to a custom cold finger or as part of a printed circuit board (PCB) circuit.

Keywords

CMOS integrated circuits; printed circuits; radiation hardening (electronics); semiconductor device testing; CMOS circuit; cryogenic test system; heavy ion radiation testing; printed circuit board; semiconductor device testing; single-event transients; Circuit testing; Cryogenics; Helium; Nitrogen; Semiconductor device measurement; Semiconductor device testing; Semiconductor devices; System testing; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378111

Filename

5378111