Title :
A single chip RF-CMOS front end LSI for GSM handy phone
Author :
Miyahara, Y. ; Kawaguchi, S. ; Shimizu, S. ; Itoh, N. ; Kato, K.
Author_Institution :
Multi Media Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
A 900 MHz CMOS handy phone LSI is described. Three special RF-CMOS circuit technologies, fully integrated 900 MHz VCO with spiral inductor and varicap diode, new IF local frequency circuit, and effective image rejection system, are introduced.
Keywords :
CMOS integrated circuits; UHF oscillators; cellular radio; inductors; large scale integration; telephone sets; varactors; voltage-controlled oscillators; 900 MHz; GSM handy phone; IF local frequency circuit; LSI; RF-CMOS circuit technologies; UHF; VCO; image rejection system; single chip RF-CMOS front end; spiral inductor; varicap diode; CMOS technology; Filters; GSM; Inductors; Integrated circuit technology; Large scale integration; Phase noise; Radio frequency; Spirals; Voltage-controlled oscillators;
Conference_Titel :
Consumer Electronics, 1999. ICCE. International Conference on
Conference_Location :
Los Angeles, CA, USA
Print_ISBN :
0-7803-5123-1
DOI :
10.1109/ICCE.1999.785284
