Crystal quality and conductivity type of epitaxial (002) ZnO films on (100) Si substrates for device applications

Author

Sardari, Saeed Esmaili ; Iliadis, Agis A. ; Stamataki, M. ; Tsamakis, D. ; Konofaos, N.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Maryland, College Park, MD, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

Zinc oxide is a wide band-gap (3.37eV) semiconductor with high exciton binding energy (60meV) and excellent piezoelectric properties, showing promise for UV lasers, optical detection, sensors, and solar cells. Epitaxial growth of ZnO on Si is challenging due to lattice mismatch and thermal expansion coefficient differences, but it is important to develop such film growth in order to enhance the functionality of Si and provide optoelectronic and gas sensing capabilities in CMOS based ICs. Furthermore, ZnO grown by most techniques is nominally ntype and p-type films are hard to achieve; hampering the development of p-n junction devices.

Keywords

CMOS integrated circuits; II-VI semiconductors; binding energy; excitons; p-n junctions; piezoelectric semiconductors; wide band gap semiconductors; zinc compounds; CMOS; UV lasers; ZnO; conductivity; crystal quality; gas sensing capabilities; high exciton binding energy; optical detection; optoelectronic; p-n junction devices; piezoelectric properties; sensors; solar cells; wide band-gap semiconductor; zinc oxide; Conductive films; Conductivity; Excitons; Optical films; Optical sensors; Photonic band gap; Piezoelectric films; Semiconductor films; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378112

Filename

5378112