• DocumentCode
    3056230
  • Title

    Mapping grain orientation of high mobility thienothiophene copolymer thin films by transmission electron microscopy and image analysis

  • Author

    Zhang, Xinran ; Hudson, Steven D. ; DeLongchamp, Dean M. ; Gundlach, David J.

  • Author_Institution
    Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    In this work, poly(2,5-Bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT), a state-of-the-art solution-processable semiconducting polymer with field-effect hole mobility as high as 0.1-1 cm2/V s, was used for grain mapping. The large, terraced crystals of pBTTT that form in spin-cast thin films after heating to a mesophase on a hydrophobic substrate extend laterally for microns and vertically throughout the film thickness, making it a suitable material for imaging compared with other semiconducting polymers. By using dark-field (DF) transmission electron microscopy (TEM), we found that the characteristic terraced structure of a pBTTT with tetradecyl side chains (pBTTT-C14) is made up of micron- or submicron-sized crystalline grains which contain even smaller nanocrystals.
  • Keywords
    crystal orientation; hole mobility; polymer blends; substrates; thin films; transmission electron microscopy; crystalline grains; field effect hole mobility; grain mapping; grain orientation; high mobility thienothiophene copolymer; hydrophobic substrate; image analysis; pBTTT; poly(2,5-Bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene; semiconducting polymers; thin films; transmission electron microscopy; Electron mobility; Heating; Image analysis; Polymer films; Semiconductivity; Semiconductor films; Semiconductor thin films; Substrates; Transistors; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378117
  • Filename
    5378117